smd type ic smd type transistors 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 BCW65,bcw66 features for general af applications. high current gain. low collector-emitter saturation voltage. absolute maximum ratings ta = 25 parameter symbol BCW65 bcw66 unit collector-base voltage v cbo 60 75 v collector-emitter voltage v ceo 32 45 v emitter-base voltage v ebo 55 v collector current i c ma peak collector current i cm a base current i b ma peak base current i bm ma total power dissipation,t s =79 p tot mw junction temperature t j storage temperature t stg junction - soldering point r thjs k/w 800 1 200 100 330 150 -65to+150 215 smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type smd type ic smd type product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
smd type ic smd type transistors h fe classification type rank a b c marking eas ebs ecs type rank f g h marking efs egs ehs BCW65 bcw66 electrical characteristics ta = 25 symbol testconditons min typ max unit BCW65 32 bcw66 45 BCW65 60 bcw66 75 v (br)ebo i e =10a,i c =0 5 v BCW65 v cb =32v,i e =0 20 bcw66 v cb =45v,i e =0 20 BCW65 v cb =32v,i e =0,t a = 150 20 bcw66 v cb =45v,i e =0,t a = 150 20 i ebo v eb =4v,i c =0 20 na a/f 35 b/g 50 c/h 80 a/f 75 b/g 110 c/h 180 a/f 100 160 250 b/g 160 250 400 c/h 250 350 630 i c = 100 ma, i b =10ma 0.3 i c = 500 ma, i b =50ma 0.7 i c = 100 ma, i b =10ma 1.25 i c = 500 ma, i b =50ma 2 f t i c =50ma,v ce = 5 v, f = 100 mhz 170 mhz ccb v cb =10v,f=1mhz 6 ceb v eb =0.5v,f=1mhz 60 * pulse test: t 300s, d = 2%. i c = 100 a, v ce =10v i c =10ma,v ce =1v h fe h fe parameter collector-base breakdown voltage collector-emitter breakdown voltage dc current gain * hfe-grp. emitter cutoff current dc current gain * hfe-grp. dc current gain * hfe-grp. a v (br)ceo i c =10ma,i b =0 v v v (br)cbo i c =10a,i e =0 na h fe i c = 100 ma, v ce =1v collector-emitter saturation voltage * v ce(sat) v pf emitter-base capacitance emitter-base breakdown voltage i cbo i cbo collector cutoff current base-emitter saturation voltage * v be(sat) transition frequency collector-base capacitance smd type ic smd type transistors BCW65,bcw66 smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type smd type ic smd type product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123
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